TCAD Simulation of Radiation Effects on 180 nm Logic Inverters
- authored by
- Eike Trumann, Amen Allah Bahri, Gia Bao Thieu, Kirsten Weide-Zaage, Dorian von Wolff, Andre Bausen, Alexander Müller, Guillermo Payá-Vayá
- Abstract
This work presents a physically based simulation evaluation of the effects of single ionizing particles and displacement damage on logic inverter gates in a complementary metal-oxide semiconductor (CMOS) with 180 nm structure size. A technology computer-aided-design (TCAD) model is combined with a radiation model to allow the simulation of charged particles with a linear energy transfer (LET) between 1 and 100MeVmg·cm2 . For displacement damage simulation, proton energies between 1 and 10 MeV and neutron energies between 1.6 and 14 MeV have been evaluated to estimate the resulting transistor threshold voltages.
- Organisation(s)
-
Research Group ZURI
- External Organisation(s)
-
Technische Universität Braunschweig
Research Institute for Protective Technologies and CBRN Protection (WIS)
- Type
- Conference contribution
- Publication date
- 06.04.2025
- Publication status
- Published
- Peer reviewed
- Yes
- ASJC Scopus subject areas
- Electrical and Electronic Engineering, Computational Mechanics, Safety, Risk, Reliability and Quality, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Modelling and Simulation, Fluid Flow and Transfer Processes
- Electronic version(s)
-
https://doi.org/10.1109/EuroSimE65125.2025.11006564 (Access:
Closed)
