Institute of Microelectronic Systems Institute News
ESSERC 2025: Neuer 28-nm-CMOS-Chip von Adrian Gehl und ein Wiedersehen mit drei Generationen von Doktoranden

ESSERC 2025: New 28 nm CMOS chip from Adrian Gehl and a reunion with three generations of doctoral students

Left: The 28 nm CMOS chip developed at IMS. Top right: Adrian Gehl during his presentation at ESSERC 2025. Bottom right: At the ESSERC social event at Munich's Hofbräuhaus (from left): Dr. Jürgen Wittmann (Infineon Technologies), Finn Matalewski (IMS-MX doctoral candidate), Adrian Gehl (IMS-MX doctoral candidate), Professor Bernhard Wicht, Dr. Maik Kaufmann (Texas Instruments)

At ESSERC ESSERC 2025, Adrian Gehl presented his latest research findings—a multi-mode multi-ratio SC-DC-DC converter in 28nm CMOS for the next generation of automotive microcontrollers. A particular highlight is a mixed-signal auto-tuning circuit that ensures energy-efficient resonant operation at load currents of up to 1 A. The IMS congratulates Adrian Gehl on this outstanding success. We would also like to thank Infineon Technologies for the wonderful collaboration!

On the sidelines of ESSERC, Professor Wicht had a reunion with three generations of his doctoral students – a wonderful example of the enduring bond between former and current IMS researchers, which has kept the institute connected over many years and stages in the industry.