Dynamic simulation of migration induced failure mechanism in integrated circuit interconnects

verfasst von

Aymen Moujbani, Jörg Kludt, Kirsten Weide-Zaage, Markus Ackermann, Verena Hein, Lutz Meinshausen

Abstract

At the moment the miniaturisation of integrated circuits for consumer electronics means to decrease the size of Cu interconnects below 100 nm, while a lifetime of 3-5 years has to be guaranteed. For industrial and automotive applications wider Al interconnects (∼350 nm) are used, but an extreme low rate of failures (0.1 ppm) has to be reached to produce reliable end-products including dozens of components. A further progress in the development of high-end electronics and more complex industrial products needs a better prediction of possible failure mechanism and the related time to failure of the chosen technology. This investigation is focused on migration induced void formation and combines the results of process simulations, for the back end of line, (intrinsic pre-stress) with the dynamic simulation of the migration induced material movement in the interconnects. To minimise the gap between idealized simulations and reliability tests the grain structure of the Al and Cu lines, the interaction between electromigration and the mass flux due concentration gradients, as well as the different transport mechanism for grain boundary and interface diffusion were taken into account. For the surrounding metal of existing voids specific activation energies in dependence on the crystal orientation of the metal surfaces were given. As result a prediction of the point of failure and the void formation process will be given for the chosen back-end technologies.

Organisationseinheit(en)

Laboratorium f. Informationstechnologie

Externe Organisation(en)

X-FAB Silicon Foundries SE

Typ

Artikel

Journal

Microelectronics reliability

Band

53

Seiten

1365-1369

Anzahl der Seiten

5

ISSN

0026-2714

Publikationsdatum

09.2013

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik, Physik der kondensierten Materie, Sicherheit, Risiko, Zuverlässigkeit und Qualität, Oberflächen, Beschichtungen und Folien, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1016/j.microrel.2013.07.097 (Zugang: Unbekannt)