Influence of air gaps on the thermal-electrical-mechanical behavior of a copper metallization

verfasst von

Irina Bauer, Kirsten Weide-Zaage, Lutz Meinshausen

Abstract

Shrinking the IC dimensions the dielectric insulation between metal interconnects has become one of the major limits on increasing circuit speed. A lot of possible new low-k materials failed to meet specifications: too leaky, too soft, too unstable, and too expensive. Due to this air gaps beside the metallization are one solution. The reliability of ULSI multilevel copper metallizations under electro- and stress migration stress test conditions is investigated here with finite element analysis. A determination of the electrical and mechanical stress in a 3D copper metallization model based on the 45 nm technology node is carried out and the impact of a variation of the applied current density as well as geometrical parameters on the thermal-electrical and mechanical behavior is investigated. For a determination of the reliability the mass flux and mass flux divergence are separately calculated by a user routine. The influence of air gaps on single via structures and structures with a chain of four vias on the thermal-electrical-mechanical behavior is determined.

Organisationseinheit(en)

Laboratorium f. Informationstechnologie

Typ

Artikel

Journal

Microelectronics reliability

Band

51

Seiten

1587-1591

Anzahl der Seiten

5

ISSN

0026-2714

Publikationsdatum

09.2011

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik, Sicherheit, Risiko, Zuverlässigkeit und Qualität, Physik der kondensierten Materie, Oberflächen, Beschichtungen und Folien, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1016/j.microrel.2011.07.011 (Zugang: Unbekannt)