Investigation of temperature gradients with regard to thermomigration in aluminium metallizations
- verfasst von
- Jörg Kludt, K. Weide-Zaage, M. Ackermann, V. Hein
- Abstract
For high temperature automotive applications a 0.35 μm aluminium CMOS is one of the common technology processes. In this process Ti/Al/Ti/TiN stacks are used as metallization. These aluminium stacks form TiAl3 layers during the following annealing step. The thermal-electrical and thermo-mechanical properties of this metallization is different from titanium or aluminium. Hence the forming TiAl3 layer influences the thermalelectrical, thermo-mechanical behaviour and reduces the current capability. The influence of the deposition temperatures on the thermal-electrical behaviour is investigated. Three different deposition temperatures of 150 °C, 250 °C and 470 °C were considered. Also the behaviour of anisotropic etching was investigated with regard to the reduced current capability.
- Organisationseinheit(en)
-
Laboratorium f. Informationstechnologie
- Externe Organisation(en)
-
X-FAB Silicon Foundries SE
- Typ
- Aufsatz in Konferenzband
- Publikationsdatum
- 2013
- Publikationsstatus
- Veröffentlicht
- Peer-reviewed
- Ja
- ASJC Scopus Sachgebiete
- Elektrotechnik und Elektronik, Modellierung und Simulation
- Elektronische Version(en)
-
https://doi.org/10.1109/EuroSimE.2013.6529896 (Zugang:
Unbekannt)
