Monolithically Integrated GaN Gate Drivers

A Design Guide

verfasst von

Michael Basler, Niklas Deneke, Stefan Monch, Richard Reiner, Bernhard Wicht, Rudiger Quay

Abstract

In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the integration of a monolithic gate driver. This tutorial-style paper aims to give insight into the design flow. It starts with the possibilities of GaN technologies in terms of IC design followed by basic driving principles of GaN HEMTs. Gate loop requirements and recommendations for the gate driver output stage are explained. A flowchart for the design of integrated gate drivers is presented with the boundary constraints from the technology, topology research, and selection using a step-by-step guide. The design flow is run through with an example scenario and the realized gate driver design is optimized for low power consumption and fast switching, which is verified with simulations and measurements. Thus, a guide is given for the design of a monolithically integrated GaN gate driver to further advance, promote, and accelerate integration in GaN.

Organisationseinheit(en)

Fachgebiet Mixed-Signal-Schaltungen

Externe Organisation(en)

Fraunhofer-Institut für Angewandte Festkörperphysik (IAF)

Typ

Artikel

Journal

IEEE Open Journal of Power Electronics

Band

4

Seiten

487-497

Anzahl der Seiten

11

Publikationsdatum

07.07.2023

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1109/OJPEL.2023.3290190 (Zugang: Offen)