A Probability Soft-Error Model for a 28-nm SRAM-based FPGA under Neutron Radiation Exposure

verfasst von

Gia Bao Thieu, Johannes Schmechel, Kirsten Weide-Zaage, Katharina Schmidt, Dorian Hagenah, Guillermo Paya-Vaya

Abstract

Bit errors due to radiation effects are becoming increasingly important as the fabrication technologies are shrinking with every generation of integrated circuits. The resulting smaller transistors are more prone to high-energy irradiation. This is relevant in avionics or even automotive, where the safety of millions of cars must be ensured. This paper proposes an experiment, where multiple FPGAs (Field Programmable Gate Arrays) are exposed to 2.45MeV neutron irradiation in parallel. Bitflips in different memory components (Block RAM, Flip-Flops, lookup-tables and configuration memory) are detected. The results show that bitflips could be detected in every memory component in every part of the FPGA. Finally, a soft-error probability model depending on the irradiation fluence can be determined. With the probability model, future implementations of fault-tolerant hardware architectures can be tested with hardware simulations using artificially generated bitflips.

Organisationseinheit(en)

Institut für Mikroelektronische Systeme

Externe Organisation(en)

Technische Universität Braunschweig
Wehrwissenschaftliches Institut Für Schutztechnologien - ABC-Schutz (WIS)

Typ

Aufsatz in Konferenzband

Publikationsdatum

2023

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Fließ- und Transferprozesse von Flüssigkeiten, Angewandte Informatik, Elektrotechnik und Elektronik, Maschinenbau, Sicherheit, Risiko, Zuverlässigkeit und Qualität, Modellierung und Simulation

Elektronische Version(en)

https://doi.org/10.1109/EuroSimE56861.2023.10100757 (Zugang: Geschlossen)