GEANT4 simulations in terms of radiation hardness of commercially available SRAM

verfasst von

Aymen Moujbani, Kirsten Weide-Zaage, Berthold Romer, Frank Sabath

Abstract

Commercial of the shelf (COTS) SRAMS were investigated by measurements and simulation in terms of radiation hardness. For the simulations the GEANT4 tool was used. With GEANT4 it is possible to determine the different particles generated by the applied energy as well as the radiation source. It was found that the single event upsets (SEU) is related to the radiation energy, technology node and react differently for the investigated SRAM. Furthermore a possible correlation between the generated particles and the SEU was found.

Organisationseinheit(en)

Institut für Mikroelektronische Systeme

Externe Organisation(en)

Wehrwissenschaftliches Institut Für Schutztechnologien - ABC-Schutz (WIS)

Typ

Aufsatz in Konferenzband

Publikationsdatum

06.05.2015

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Theoretische Informatik und Mathematik, Elektrotechnik und Elektronik, Steuerungs- und Systemtechnik, Wirtschaftsingenieurwesen und Fertigungstechnik

Elektronische Version(en)

https://doi.org/10.1109/eurosime.2015.7103106 (Zugang: Geschlossen)