Reliability evaluation of tungsten donut-via as an element of the highly robust metallization

verfasst von

Verena Hein, Marco Erstling, Raj Sekar Sethu, Kirsten Weide-Zaage, Tianlin Bai

Abstract

The typical via layout in CMOS technology with AlCu-metallizations and tungsten via is cylindrical. Common vias have a size as small as possible in the related process. More challenging application, temperature and mission profiles require higher robustness of a metallization [1,2]. Via arrays of small common vias are in use to the transfer of higher currents [3]. But the typical via array layout is not the best layout for applications which are faced to high mechanical stress because via arrays metal layer connections make these parts in the stack inflexible. The developed so called highly robust metallization is optimized for applications with extended operating conditions regarding higher currents and temperatures as well as mechanical stress [4]. Donut-Vias are elements of the highly robust metallization for the interconnection of highly robust metal lines. The paper shows the layout of a Donut-Via and explains the benefits and limits of the new layout by simulation and test results.

Organisationseinheit(en)

Institut für Mikroelektronische Systeme

Externe Organisation(en)

X-FAB Silicon Foundries SE

Typ

Artikel

Journal

Microelectronics reliability

Band

64

Seiten

259-265

Anzahl der Seiten

7

ISSN

0026-2714

Publikationsdatum

01.09.2016

Publikationsstatus

Veröffentlicht

Peer-reviewed

Ja

ASJC Scopus Sachgebiete

Elektronische, optische und magnetische Materialien, Atom- und Molekularphysik sowie Optik, Sicherheit, Risiko, Zuverlässigkeit und Qualität, Physik der kondensierten Materie, Oberflächen, Beschichtungen und Folien, Elektrotechnik und Elektronik

Elektronische Version(en)

https://doi.org/10.1016/j.microrel.2016.07.136 (Zugang: Geschlossen)