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Kludt J, Ciptokusumo J, Weide-Zaage K. Influence of the barrier properties on the mechanical stress and migration distribution in a copper metallization. in 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012. 2012. 6191701. (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012). doi: 10.1109/ESimE.2012.6191701
Kludt J, Weide-Zaage K, Ackermann M, Hein V. Simulation of the influence of TiAl 3 layers on the thermal-electrical and mechanical behaviour of Al metallizations. Microelectronics reliability. 2012 Sep;52(9-10):1987-1992. doi: 10.1016/j.microrel.2012.06.129
Meinshausen L, Weide-Zaage K, Frémont H. Electro- and thermo-migration induced failure mechanisms in Package on Package. Microelectronics reliability. 2012 Dez;52(12):2889-2906. doi: 10.1016/j.microrel.2012.06.115
Meinshausen L, Frémont H, Weide-Zaage K. Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers. Microelectronics reliability. 2012 Sep;52(9-10):1827-1832. doi: 10.1016/j.microrel.2012.06.127
Meinshausen L, Weide-Zaage K, Frémont H. Thermal management for stackable packages with stacked ICs. in 2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012. 2012. 6191700. (2012 13th International Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2012). doi: 10.1109/ESimE.2012.6191700
Bauer I, Weide-Zaage K, Meinshausen L. Influence of air gaps on the thermal-electrical-mechanical behavior of a copper metallization. Microelectronics reliability. 2011 Sep;51(9-11):1587-1591. doi: 10.1016/j.microrel.2011.07.011
Meinshausen L, Weide-Zaage K, Petzold M. Electro- and thermomigration in micro bump interconnects for 3D integration. in 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011. 2011. S. 1444-1451. 5898701. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC.2011.5898701
Meinshausen L, Weide-Zaage K, Frémont H. Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps. Microelectronics reliability. 2011 Sep;51(9-11):1860-1864. doi: 10.1016/j.microrel.2011.06.032
Ciptokusumo J, Weide-Zaage K, Aubel O. Mechanical characterization of copper based metallizations with different via-bottom geometries. in IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits. 2010. 5532227. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2010.5532227
Ciptokusumo J, Weide-Zaage K, Aubel O. Principles for simulation of barrier cracking due to high stress. in 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010. 2010. 5464617. (2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010). doi: 10.1109/ESIME.2010.5464617
Meinshausen L, Weide-Zaage K, Feng W, Frémont H. PoP prototyping by determination of matter transport effects. in 2010 IEEE CPMT Symposium Japan, ICSJ10. 2010. 5679664. (2010 IEEE CPMT Symposium Japan, ICSJ10). doi: 10.1109/CPMTSYMPJ.2010.5679664
Meinshausen L, Weide-Zaage K, Frémont H. Underfill and mold compound influence on PoP aging under high current and high temperature stress. in Electronics System Integration Technology Conference, ESTC 2010 - Proceedings. 2010. 5642803. (Electronics System Integration Technology Conference, ESTC 2010 - Proceedings). doi: 10.1109/ESTC.2010.5642803
Meinshausen L, Weide-Zaage K, Frémont H, Feng W. Virtual prototyping of PoP interconnections regarding electrically activated mechanisms. in 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010. 2010. 5464618. (2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010). doi: 10.1109/ESIME.2010.5464618
Weide-Zaage K. Exemplified calculation of stress migration in a 90nm node via structure. in 2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010. 2010. 5464542. (2010 11th International Conference on Thermal, Mechanical and Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems, EuroSimE 2010). doi: 10.1109/ESIME.2010.5464542
Weide-Zaage K, Ciptokusumo J, Aubel O. Influence of the activation energy of the different migration effects on failure locations in metallization. in Stress-Induced Phenomena in Metallization - Eleventh International Workshop on Stress-Induced Phenomena in Metallization. 2010. S. 85-90. (AIP Conference Proceedings). doi: 10.1063/1.3527141
Ciptokusumo J, Weide-Zaage K, Aubel O. Investigation of stress distribution in via bottom of Cu-via structures with different via form by means of submodeling. Microelectronics reliability. 2009 Sep;49(9-11):1090-1095. doi: 10.1016/j.microrel.2009.07.043
Feng W, Weide-Zaage K, Verdier F, Plano B, Guédon-Gracia A, Frémont H. Electrically driven matter transport effects in PoP interconnections. in 2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009. 2009. 4938457. (2009 10th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2009). doi: 10.1109/ESIME.2009.4938457
Aubel O, Thierbach S, Seidel R, Freudenberg B, Meyer MA, Feustel F et al. Comprehensive reliability analysis of CoWP metal Cap unit processes for high volume production in sub-μm dimensions. in 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. S. 675-676. 4558983. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2008.4558983
Weide-Zaage K, Zhao J, Ciptokusumo J, Aubel O. Determination of migration effects in Cu-via structures with respect to process-induced stress. Microelectronics reliability. 2008 Aug;48(8-9):1393-1397. doi: 10.1016/j.microrel.2008.06.028
Weide-Zaage K, Kashanchi F, Aubel O. Simulation of migration effects in nanoscaled copper metallizations. Microelectronics reliability. 2008 Aug;48(8-9):1398-1402. doi: 10.1016/j.microrel.2008.06.025
