Publikationen der Arbeitsgruppe RESRI

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Weide-Zaage K, Fremont H, Wang L. Simulation of migration effects in PoP. in EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems. 2008. 4525074. (EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems). doi: 10.1109/ESIME.2008.4525074
Weide-Zaage K. Simulation of migration effects in solder bumps. IEEE Transactions on Device and Materials Reliability. 2008 Sep;8(3):442-448. 4595633. doi: 10.1109/TDMR.2008.2002342
Weide-Zaage K, Dalleau D, Danto Y, Fremont H. Dynamic void formation in a DD-copper-structure with different metallization geometry. Microelectronics reliability. 2007 Feb;47(2-3):319-325. doi: 10.1016/j.microrel.2006.09.012
Frémont H, Horaud W, Weide-Zaage K. Measurements and FE-simulations of moisture distribution in FR4 based printed circuit boards. in 7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006. 2006. 1643964. (7th International Conference on Thermal, Mechanical and Multiphysics Simulation and Experiments in Micro-Electronics and Micro-Systems, EuroSimE 2006). doi: 10.1109/ESIME.2006.1643964
Weide-Zaage K, Horaud W, Frémont H. Moisture diffusion in printed circuit boards: Measurements and finite- element- simulations. Microelectronics reliability. 2005 Sep;45(9-11):1662-1667. doi: 10.1016/j.microrel.2005.07.077
Weide-Zaage K, Hein V. Simulation of mass flux divergence distributions for an evaluation of commercial test structures with tungsten-plugs. in Proceedings of the 6th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems - EuroSimE 2005. 2005. S. 353-358. 1502827. (Proceedings of the 6th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Micro-Electronics and Micro-Systems - EuroSimE 2005). doi: 10.1109/ESIME.2005.1502827
Frémont H, Delétage JY, Weide-Zaage K, Danto Y. How to study delamination in plastic encapsulated devices. Microelectronics reliability. 2004 Sep;44(9-11 SPEC. ISS.):1311-1316. doi: 10.1016/j.microrel.2004.07.015
Nguyen HV, Salm C, Krabbenborg B, Weide-Zaage K, Bisschop J, Mouthaan AJ et al. Effect of thermal gradients on the electromigration life-time in power electronics. in 2004 IEEE International Reliability Physics Symposium: Proceedings. January Aufl. Band 2004-January. 2004. S. 619-620. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/RELPHY.2004.1315418
Nguyen HV, Salm C, Krabbenborg B, Weide-Zaage K, Bisschop J, Mouthaan AJ et al. Effect of thermal gradients on the electromigration lifetime in power electronics. in 2004 IEEE International Reliability Physics Symposium. Proceedings. 2004. S. 619-620. (Annual Proceedings - Reliability Physics (Symposium)).
Weide-Zaage K, Dalleau D, Danto Y, Fremont H. Void formation in a copper-via-structure depending on the stress free temperature and metallization geometry. in Ernst LJ, Zhang GQ, Rodgers P, Saint Leger O, Hrsg., Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004. 2004. S. 367-372. (Proceedings of the 5th International Conference on Thermal and Mechanical Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2004).
Dalleau D, Weide-Zaage K, Danto Y. Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures. Microelectronics reliability. 2003 Sep;43(9-11):1821-1826. doi: 10.1016/S0026-2714(03)00310-X
Weide-Zaage K, Dalleau D, Yu X. Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanisms. Materials Science in Semiconductor Processing. 2003 Feb;6(1-3):85-92. doi: 10.1016/S1369-8001(03)00075-1
Dalleau D, Weide-Zaage K. Three-dimensional voids simulation in chip metallization structures: A contribution to reliability evaluation. Microelectronics reliability. 2001 Sep;41(9-10):1625-1630. doi: 10.1016/S0026-2714(01)00151-2
Weide-Zaage K, Keck C, Willemen J. Verifikation der layout getreuen FE-simulation eines MO-166 gehäuses mittels elektrischer messung und IR-untersuchung. ITG-Fachbericht. 2001;(164):219.
Willemen J, Soppa W, Pieper KW, Weide K, Gärtner R. Vergleich industrieller entwicklungswerkzeuge für elektrothermische schaltungssimulation. ITG-Fachbericht. 2001;(164):143.
Dalleau D, Weide-Zaage K. 3-D time-depending electro- and thermomigration simulation of metallization structures. Advanced Metallization Conference (AMC). 2000;477-481.
Weide K. Impact of FEM simulation on reliability improvement of packaging. Microelectronics reliability. 1999;39(6-7):1079-1088. doi: 10.1016/S0026-2714(99)00153-5
Yu X, Weide K. Finite element analysis of thermal-mechanical stress induced failure in interconnects. Materials Research Society Symposium - Proceedings. 1999;539:269-274.
Weide K, Keck C, Yu X. Influence of the material properties on the thermal behaviour of a package. in Microelectronic manufacturing, yield, reliability, and failure analysis IV: 23 - 24 September 1998, Santa Clara, California. Bellingham: SPIE. 1998. S. 112-121. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.324388
Yu X, Weide K. A study of the thermal - electrical- and mechanical influence on degradation in an aluminum - pad structure. Microelectronics reliability. 1997;37(10-11):1545-1548. doi: 10.1016/S0026-2714(97)00105-4