Monolithically Integrated GaN Gate Drivers

A Design Guide

authored by

Michael Basler, Niklas Deneke, Stefan Monch, Richard Reiner, Bernhard Wicht, Rudiger Quay

Abstract

In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the integration of a monolithic gate driver. This tutorial-style paper aims to give insight into the design flow. It starts with the possibilities of GaN technologies in terms of IC design followed by basic driving principles of GaN HEMTs. Gate loop requirements and recommendations for the gate driver output stage are explained. A flowchart for the design of integrated gate drivers is presented with the boundary constraints from the technology, topology research, and selection using a step-by-step guide. The design flow is run through with an example scenario and the realized gate driver design is optimized for low power consumption and fast switching, which is verified with simulations and measurements. Thus, a guide is given for the design of a monolithically integrated GaN gate driver to further advance, promote, and accelerate integration in GaN.

Organisation(s)

Mixed-Signal Circuits Section

External Organisation(s)

Fraunhofer Institute for Applied Solid State Physics (IAF)

Type

Article

Journal

IEEE Open Journal of Power Electronics

Volume

4

Pages

487-497

No. of pages

11

Publication date

07.07.2023

Publication status

Published

Peer reviewed

Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Electronic version(s)

https://doi.org/10.1109/OJPEL.2023.3290190 (Access: Open)